Chemoresponsive monolayer transistors.

نویسندگان

  • Xuefeng Guo
  • Matthew Myers
  • Shengxiong Xiao
  • Michael Lefenfeld
  • Rachel Steiner
  • George S Tulevski
  • Jinyao Tang
  • Julian Baumert
  • Frank Leibfarth
  • James T Yardley
  • Michael L Steigerwald
  • Philip Kim
  • Colin Nuckolls
چکیده

This work details a method to make efficacious field-effect transistors from monolayers of polycyclic aromatic hydrocarbons that are able to sense and respond to their chemical environment. The molecules used in this study are functionalized so that they assemble laterally into columns and attach themselves to the silicon oxide surface of a silicon wafer. To measure the electrical properties of these monolayers, we use ultrasmall point contacts that are separated by only a few nanometers as the source and drain electrodes. These contacts are formed through an oxidative cutting of an individual metallic single-walled carbon nanotube that is held between macroscopic metal leads. The molecules assemble in the gap and form transistors with large current modulation and high gate efficiency. Because these devices are formed from an individual stack of molecules, their electrical properties change significantly when exposed to electron-deficient molecules such as tetracyanoquinodimethane (TCNQ), forming the basis for new types of environmental and molecular sensors.

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High-performance MoS2 transistors with low-resistance molybdenum contacts

Articles you may be interested in Separation of interlayer resistance in multilayer MoS2 field-effect transistors Appl. Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl.

متن کامل

Statistical study of deep submicron dual-gated field-effect transistors on monolayer chemical vapor deposition molybdenum disulfide films.

Monolayer molybdenum disulfide (MoS2) with a direct band gap of 1.8 eV is a promising two-dimensional material with a potential to surpass graphene in next generation nanoelectronic applications. In this Letter, we synthesize monolayer MoS2 on Si/SiO2 substrate via chemical vapor deposition (CVD) method and comprehensively study the device performance based on dual-gated MoS2 field-effect trans...

متن کامل

Top-gate ZnO nanowire transistors and integrated circuits with ultrathin self-assembled monolayer gate dielectric.

A novel approach for the fabrication of transistors and circuits based on individual single-crystalline ZnO nanowires synthesized by a low-temperature hydrothermal method is reported. The gate dielectric of these transistors is a self-assembled monolayer that has a thickness of 2 nm and efficiently isolates the ZnO nanowire from the top-gate electrodes. Inverters fabricated on a single ZnO nano...

متن کامل

Real-time multicolor DNA detection with chemoresponsive diffraction gratings and nanoparticle probes.

We report a real-time DNA detection method that utilizes single-strand DNA-modified nanoparticle probes and micropatterned chemoresponsive diffraction gratings interrogated simultaneously at multiple laser wavelengths. The surface-bound nanoparticle probe based assay with the chemoresponsive diffraction grating signal transduction scheme results in an experimentally simple DNA detection protoco...

متن کامل

Selective chemical vapor sensing with few-layer MoS2 thin-film transistors: Comparison with graphene devices

Articles you may be interested in Growth-substrate induced performance degradation in chemically synthesized monolayer MoS2 field effect transistors Appl. Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition Appl. Detection of organic vapors by graphene films functionalized with metallic nanoparticles Oxygen sensing properties at high temperatu...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:
  • Proceedings of the National Academy of Sciences of the United States of America

دوره 103 31  شماره 

صفحات  -

تاریخ انتشار 2006